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Propagation Channel in Silicon in the Sub-THz Band for MPSoCs

机译:MPSoC的亚太赫兹频段中硅的传播通道

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In this article, a new approach to the propagation channel in the Sub-THz frequency range is adopted using silicon-based technologies. This channel enables the feasibility of a Wireless-Interconnects-Network-On-Chip (WiNoC) to be implemented in a multiprocessor system-on-chip (MPSoC). However, it is functional only after limiting the silicon substrate problems validated by measurement on patch antennas manufactured in V band (40-80 GHz). The new approach consists of adding an absorbing material around the substrate. This design provides flat transmission levels over large bandwidths. Consequently, an increase in the frequency of operation to the Sub-THz range and the use of miniature vertical monopole antennas became possible. The isolation of the silicon from any interference is a major contribution in this paper that permits us to use the high resistivity silicon as a propagation medium. Based on this, a scenario of 16 antennas is subsequently analyzed as a realistic many-core network implementation.
机译:在本文中,采用基于硅的技术对Sub-THz频率范围内的传播信道采用了一种新方法。该通道使在多处理器片上系统(MPSoC)中实现无线互连网络片上网络(WiNoC)的可行性成为可能。但是,只有在限制通过在V波段(40-80 GHz)中制造的贴片天线上进行测量而验证的硅基板问题之后,该功能才起作用。新方法包括在基材周围添加吸收材料。这种设计可在较大带宽上提供平坦的传输级别。因此,可以将工作频率提高到Sub-THz范围,并可以使用微型垂直单极天线。硅与任何干扰的隔离是本文的主要贡献,它使我们能够使用高电阻率的硅作为传播介质。基于此,随后将分析16个天线的方案作为现实的多核网络实施方案。

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