Design of an ultra-wideband low-noise amplifier for spin wave readout circuitry in 65 nm CMOS technology

摘要

We introduce a new approach to measure spin waves on-chip and describe the design of an ultra-wideband Low-Noise Amplifier (LNA) implemented in a readout circuitry for characterization of the spin wave devices. The LNA shows a gain of 22.6 dB in the frequency range between 9.7 GHz and 43.3 GHz. The minimum Noise Figure (NF) is 5.3 dB at 22.75 GHz. Simulations were performed with 65 nm CMOS technology node in Cadence Virtuoso. Estimated power consumption and chip area are 41.62 mW and 0.172 mm2, respectively.