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Compact and Tunable Room Temperature THz Source from Quantum Dot Based Ultrafast Photoconductive Antennae

机译:基于量子点的超快光电导天线的紧凑且可调的室温太赫兹源

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Novel materials, notably quantum-dot (QD) semiconductor structures, offer the unique possibility of combining exploitable spectral broadening of both gain and absorption with ultrafast carrier dynamic properties. Thanks to these characteristics, QD-based devices have enhanced the properties of CW devices as well as the development of compact ultrashort pulse lasers and opened up new possibilities in ultrafast science and technology. In this paper we review recent progress in generation of CW and pulsed THz radiation from QD based photoconductive antennae (PCA) pumped by ultrafast and dual wavelength semiconductor lasers. By engineering the design of the QD structure, effective pump wavelengths can be tuned in the range between 0.9-1.3 μm ZKLFK LV ZHOO beyond the GaAs energies, hence compact and relatively cheap ultrafast and narrow line double-wavelength semiconductor and fibre pump lasers can be used for pumping such antennae for both pulsed and CW THz generation. However, antennae possess a low coefficient of optical-to-terahertz conversion due to the carrier screening effect and low quantum efficiency. To overcome these limitations, an optical nano-antennae technique can be employed. Such nano-antennae can be used to enhance the electric field and increase the absorption cross section in the active layers of the photoconductive antenna. We present our recent results on enhancement of THz generation in QD based log-periodic PCA with silver nano-antennae embedded in the antenna gap. Our first results demonstrated that using silver spheroid nano-antennae fabricated by a relatively simple method, can increase the coefficient of optical-to-terahertz conversion up to 4 times. In conclusion the development of an ultra-compact, efficient, room temperature THz source is possible. The inclusion of multiple bandgap-engineered semiconductor materials and quantum-confined structures enables additional pump absorption energy ranges and ultrafast charge carrier dynamics, crucial in the efficient generation of THz radiation.
机译:新型材料,尤其是量子点(QD)半导体结构,提供了将增益和吸收的可利用光谱展宽与超快载流子动态特性相结合的独特可能性。由于这些特性,基于量子点的器件增强了连续波器件的性能以及紧凑型超短脉冲激光器的开发,并为超快科学技术开辟了新的可能性。在本文中,我们回顾了由超快和双波长半导体激光器泵浦的基于量子点的光电导天线(PCA)产生连续波和脉冲THz辐射的最新进展。通过设计QD结构的设计,可以将有效泵浦波长调整到GaAs能量以外的0.9-1.3μmZKLFK LV ZHOO范围内,因此可以制造紧凑且相对便宜的超快且窄线双波长半导体和光纤泵浦激光器。用于为脉冲和CW THz生成泵送此类天线。然而,由于载流子屏蔽效应和低量子效率,天线具有低的光-太赫兹转换系数。为了克服这些限制,可以采用光学纳米天线技术。这种纳米天线可用于增强电场并增加光电导天线的有源层中的吸收截面。我们提出了关于基于QD的对数周期PCA的THz产生增强的最新结果,其中在天线间隙中嵌入了银纳米天线。我们的第一个结果表明,使用通过相对简单的方法制造的球形银纳米天线,可以将光太赫兹转换系数提高多达4倍。总之,开发超紧凑,高效的室温太赫兹源是可能的。包含多种带隙设计的半导体材料和量子受限结构,可实现更多的泵浦吸收能范围和超快的电荷载流子动力学,这对于有效产生THz辐射至关重要。

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