Development of Technology Formation of the Optical Waveguide Structures Based on InP by Plasma Etching

摘要

The paper presents the process development results of plasma etching of InP-based structures in inductively coupled plasma in the Cl2/Ar gas mixture with the addition of N2 and O2. Etching was performed on silicon nitride mask. Dependences of process parameters influence on the etching rate, profile and surface roughness of formed elements are shown. Elements of optical waveguide structures were fabricated, using developed etching process.