p-Heterogate Ge EHBTFET with asymmetric dielectric underlap pockets

摘要

In this work, we investigate a p-Ge Heterogate Electron Hole Bilayer Tunnel FET (p-HG-EHBTFET) with asymmetric underlaps and dielectric underlap pockets (DUPs). Such a structure blocks the ambipolar as well as OFF state parasitic leakage simultaneously. Further, the asymmetric DUPs overcome the constraint of longer underlaps, particularly required in Ge EHBTFETs. Even at scaled underlaps as low as 20nm, SS<60mV/dec criteria is maintained with an OFF-state leakage of less than 10pA/µm with ambipolar current suppression of six orders over the entire voltage range of 0<|VGS|<0.5V.