A Compact Circuit Model for Si-Ge Avalanche Photodiodes over a Wide Range of Gain

摘要

A Si-Ge avalanche photodiode circuit model is demonstrated, which includes carrier transit time, avalanche buildup time, and electrical parasitics. Electrical and optical dynamics are accurately captured over a wide range of gain. Excellent matching between simulated and measured 50 Gb/s PAM4 eye diagrams is achieved.