Gate Oxide Process for III-V / Si Hybrid MOS Capacitor Modulator

摘要

Progresses in Photonic Integrated Circuits (PICs) demand development of high performance photonic devices, including phase modulators. Capacitive phase modulators present high efficiency and low consumption, at the cost of technical challenges for their integration in PICs. A 200mm wafer process flow for thin gate oxide employed for MOSCAP modulators fabrication is presented here.