High-Speed Plasmonic-Conductive Oxide-Silicon Modulator by Epsilon-Near-Zero Electro-Absorption

摘要

We designed and demonstrated a high-speed plasmonic-conductive oxide-silicon modulator using epsilon-near-zero electro-absorption, achieving modulation bandwidth of 3.5GHz and 4.5Gb/s data rate. The electro-absorption modulator covers the entire C-band from 1515 nm to 1580 nm wavelength.