Parasitic Extraction Methodology for MEMS Sensors with Active Devices

摘要

Nowadays, the demand for a MEMS development/design kit (MDK) is even more in focus than ever before. In order to achieve a high quality and cost effectiveness in the development process for automotive and consumer applications, an advanced design flow for the MEMS (micro electro mechanical systems) element is urgently required. In this paper, such a development methodology and flow for parasitic extraction of active semiconductor devices is presented. The methodology considers geometrical extraction and links the electrically active pn-junctions to SPICE standard library models and subsequently extracts the netlist. An example for a typical pressure sensor is presented and discussed. Finally, the results of the parasitic extraction are compared with fabricated devices in terms of accuracy and capability.