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A radiation resistant library based on DICE and fault-tolerant delay filtering techniques in CMOS 0.18μm technology

机译:基于DICE和CMOS0.18μm技术的容错延迟滤波技术的抗辐射库

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A radiation resistant standard cell library is completed based on SMIC 0.18 μm technology in this paper. Standard cell library includes combinatorial logic cells and sequential logic cells. SET (Single Event Transient) effect always occurs in combinatorial logic cells, and SEU (Single Event Upset) effect always occurs in sequential logic cells. SEL(Single Event Latchup) and TID(Total Ionizing Dose) effects affect all logic cells. According to radiation effects, logic cells in the standard cell library are designed with harden methods at the circuit level and the layout level. Combination logic cells adopt fault-tolerant delay filtering method in circuit level, and sequential logic cells use DICE structure in circuit design. A guard ring has been added to the layout design for the SEL and TID effects. Then physical information and timing information are extracted for all cells, and the library building process is completed. Finally we use EDA tools to verify the availability of the anti-radiation library.
机译:本文基于SMIC 0.18μm技术完成了抗辐射标准细胞文库。标准单元库包括组合逻辑单元和顺序逻辑单元。 SET(单事件瞬变)效应总是在组合逻辑单元中发生,而SEU(单事件翻转)效应总是在顺序逻辑单元中发生。 SEL(单事件闩锁)和TID(总电离剂量)效果会影响所有逻辑单元。根据辐射效应,标准单元库中的逻辑单元在电路级和布局级采用硬化方法进行设计。组合逻辑单元在电路级采用容错延迟滤波方法,顺序逻辑单元在电路设计中采用DICE结构。在SEL和TID效果的布局设计中添加了保护环。然后,为所有单元提取物理信息和时序信息,并完成库构建过程。最后,我们使用EDA工具来验证抗辐射库的可用性。

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