A 130–150 GHz Power Amplifier for Millimeter Wave Imaging in 65-nm CMOS

摘要

This paper presents the design of a 140 GHz power amplifier for millimeter wave imaging in 65-nm CMOS technology. An optimized layout is used to improve the gain in millimeter wave band and coupled resonator matching network is used to improve the bandwidth of the power amplifier. The PA achieves a peak gain of 18.2 dB with a 3-dB bandwidth of 130-150 GHz, which is beneficial for millimeter wave imaging. The P_sat and peak PAE are 10.5 dBm and 15.6%, respectively.