Selector-Free Cross-Point Memory Architecture Based on Ferroelectric MFM Capacitors

摘要

This paper proposes a selector-free cross-point memory architecture. The memory cell consists of a single ferroelectric capacitor without a select transistor or any other selector device. The selection of a memory bit is accomplished by driving half of the program voltage (V_PP/2) on selected wordline and another V_PP/2 of opposite polarity on selected bitline, where V_PP exceeds the coercive voltage of the ferroelectric capacitor.