Effective Defect Screening of Integrated Large HV LDMOS Driver in Critical Automotive Application towards “Zero Defects”

摘要

There are many inline defects associated with full processing such as gate oxide defect, crystal defect and etc. In this work, a dedicated structure was developed by using a large driver HV LDMOS device to assess the risk of inline defects. We have provided 3 different case studies on the development of defect screening methods which are gate oxide integrity in HV MOS, front-end defects and Metal 1 to Metal 1 spacing.