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Introducing Asymmetry in a CMOS Latch to Obtain Inherent Power-On-Reset Behavior

机译:在CMOS锁存器中引入不对称以获得固有的上电复位行为

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A very important characteristic of sequential circuits is the initial state of the registers. Commonly, it is not possible to guarantee the logic value of the registers after the energizing of the circuit, so their initial values are forced through a Power-On-Reset module. In this paper we propose an asymmetric alternative to the conventional CMOS latch topology, which ensures its initial stored value without the use of additional circuits. We present the theoretical considerations that determine the initial state in the conventional and new topologies. Since the geometry of the transistors used to create the asymmetry is equal to that of the conventional circuit, the same occupied area is kept. A flip-flop was fabricated in CMOS 130 nm using both topologies. The measurements over 16 different samples demonstrated the correct functionality of the new topology when compared to the conventional one.
机译:时序电路的一个非常重要的特性是寄存器的初始状态。通常,在电路通电后无法保证寄存器的逻辑值,因此必须通过上电复位模块来强制其初始值。在本文中,我们提出了传统CMOS锁存器拓扑的非对称替代方案,该方案可确保其初始存储值而无需使用其他电路。我们提出了确定常规和新拓扑中初始状态的理论考虑。由于用于产生不对称性的晶体管的几何形状等于常规电路的几何形状,因此可以保持相同的占用面积。使用这两种拓扑结构在CMOS 130 nm中制造了一个触发器。与传统样本相比,对16种不同样本的测量证明了新拓扑的正确功能。

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