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Study of the Effect of Al and In Doping on the Structural, Optical, and Electrical Properties of Sprayed SnO2 Films

机译:Al和In掺杂对喷涂SnO 2 薄膜结构,光学和电学性质的影响研究

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In this work we study the effect of Al and In doping on the structural, morphological, electrical and optical properties of SnO2 thin films. These films are deposited on glass substrates by spray pyrolysis technique, and doped with different Al and In concentrations (0, 2 and 4at%). The deposited films were studied by X-ray diffraction XRD, scanning electron microscopy SEM, UV-Vis spectrophotometry, and four probe technique for electrical resistivity measurements. The XRD shows that all films were polycrystalline and exhibit tetragonal rutile structure with (110) plan as preferred orientation. The SEM image shows a dense surface with different shapes and sizes grains depending of the doping element. The transmittance of the films is in the average of 70 - 85%. The incorporation of Al and In dopants in the films improve its electrical and optical properties.
机译:在这项工作中,我们研究了Al和In掺杂对SnO的结构,形态,电学和光学性质的影响 2 薄膜。这些薄膜通过喷雾热解技术沉积在玻璃基板上,并掺杂有不同的Al和In浓度(0、2和4at )。通过X射线衍射XRD,扫描电子显微镜SEM,UV-Vis分光光度法和四探针技术测量电阻率,对沉积的膜进行了研究。 X射线衍射表明,所有薄膜都是多晶的,并表现出四方金红石结构,以(110)晶面为优选取向。 SEM图像显示出致密的表面,其具有不同形状和尺寸的晶粒,这取决于掺杂元素。薄膜的透射率平均为70-85%。在膜中掺入Al和In掺杂剂可改善其电学和光学性能。

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