Impacts of bonding-layer resistance of Si bottom cells on interface resistance in InGaP/GaAs/Si hybrid triple-junction cells

摘要

We fabricate InGaP/GaAs/Si hybrid triple-junction (3J) cells with different sheet resistances of bonding layers in Si bottom cells. We estimate resistances across the p-GaAs/n-Si bonding interfaces of the respective 3J cells by measuring the potentials of the bonding layers. We find that the interface resistances are higher in 3J cells with the bonding layers of Si bottom cells with higher sheet resistances.