Novel Sputter Film Deposition to Fabricate Thick Films with Extremely Smooth Surface Suitable for Room Temperature Bonding

摘要

SiO₂ films were deposited on glass wafers using energy treatment sputtering (ETS). Surface roughness S_a of ETS-SiO₂ film was 0.17 nm, which is remarkably smaller than that of films deposited using conventional sputtering (Sa=0.46 nm). Bonding using the extremely smooth surface was demonstrated.