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A Novel Ultra-Wideband CMOS Low-Noise Amplifier for Wireless Communication

机译:用于无线通信的新型超宽带CMOS低噪声放大器

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The paper presents the investigation of a novel ultra-wideband CMOS low-noise amplifier for receiver system used for wireless communication. The design is based on a multistage cascade and cascode amplifier cell with a capacitive gain-peaking technique offering gain-enhanced noise cancellation that gives a band of 16.2 GHz, maximum forward gain of nearly 8 dB, NF of 3 dB and impedance matching of nearly 55 Ω is obtained. The proposed architecture is a wideband amplifier in conjunction with the previously proposed cell giving much wider band of 21 GHz. The NF of 1.6 dB is achieved with a maximum gain of approximately 19 dB, while the impedance matching is nearly 50 Ω. The LNA is implemented using design kit in ADS.v.2 2013 platform and 180-nm design technology.
机译:本文介绍了一种用于无线通信接收器系统的新型超宽带CMOS低噪声放大器的研究。该设计基于具有电容增益峰值技术的多级级联和共源共栅放大器单元,可提供增益增强的噪声消除功能,可消除16.2 GHz频带,最大正向增益接近8 dB,NF达到3 dB,阻抗匹配接近获得55Ω。所提出的架构是宽带放大器,与先前提出的小区相结合,给出了21 GHz的更宽频带。以大约19 dB的最大增益实现1.6 dB的NF,而阻抗匹配接近50Ω。 LNA是使用ADS.v.2 2013平台中的设计套件和180纳米设计技术实现的。

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