Enhanced SPICE memristor model with dynamic ground

摘要

In this paper, an improved memristor SPICE model of [1] is presented by incorporating dynamic ground feature. Thus the proposed model enables the memristor to admit bidirectional current flow regardless of the manner it is connected to its voltage source and behaves similar to the electrical characteristics of the physical memristor. The simulation results of the proposed memristor model shows that they are in close agreement with experimental results.