A Low Power 180 nm CMOS Power Amplifier with 47 PAE for NB IoT Application

摘要

This paper presents the design of 180 nm single-stage CMOS Class-AB power amplifier (PA) for Narrow-Band Internet of Things (NB-IoT) application. The PA's targeted operating frequency is 1.95 GHz which is located at the Band 1 frequency bandwidth of NB-IoT. At schematic level simulation, the PA achieved a 12 dB power gain and maximum output power of 23 dBm. The peak PAE achieved is 47% with corresponding peak OIP3 of 37 dBm. The CMOS PA operated under the headroom of 3.3 V voltage supply with the gate biasing voltage supply of 0.8 V. The designed single-stage CMOS PA provides good efficiency with a minimum trade-off between linearity and output power which makes it suitable for NB-IoT application.