Effect of temperature dependence on performance of Digital CMOS circuit technologies

摘要

Aggressive technology scaling and an increasing demand of high performance VLSI circuits has resulted in higher current densities and increased power dissipation. A significant fraction of this power is converted to heat and an exponential rise in heat density is experienced. As a consequence, temperature measurement and control are critical tasks in many applications. Temperature variations often alter threshold voltage, carrier mobility and saturation velocity of MOSFET and thereby altering the performance of the CMOS circuits. This paper identifies the device parameters that characterize the variation of MOSFET current due to temperature fluctuations on 180nm CMOS technology. Further, the effect of temperature variation on performance of CMOS digital circuits and optimization of device parameters for temperature variation insensitive performance of the circuit is also presented.