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Interface defect breakdown property and electric field simulation of distribution cable accessories

机译:配电电缆配件的接口缺陷击穿特性和电场仿真

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Distribution cable accessories are the key equipment of distribution network system, XLPE/SIR dielectric interface is the weak link of cable accessory insulation. In the work, the interface defect model of XLPE/SIR double-layer structure has been designed, and breakdown properties of double-layer structure with different defects have been studied. Further, the interface defect simulation model of double-layer structure and the cable joint defect are established. The experimental results show the breakdown strength of the specimens with double-layer structure decreases obviously after the defects are introduced, among which the breakdown strength of metal defects and semi-conductive defects are 41.37kV /mm and 43.66kV /mm respectively, which are decreased by 14.2 % and 9.5 % than the samples without defects. The simulation results show the electric field distortion caused by metal defects and semi-conductive defects in the double-layer structure are 44.6 kV /mm and 44.3 kV /mm respectively. The distortion caused by insulation defects is relatively small about 28.3kV/mm, which is consistent with the experimental law. The simulation of cable accessory interface defect shows that the maximum distorted electric field caused by metal defects and semiconducting defects appear at 3.5mm away from the three junction points of “XLPE-SIR-stress cone”, which is about 3.56 kV /mm; In contrast, the maximum electric field distortion caused by insulation defects occurred at the three junction points, which was about 7.23 kV/mm.
机译:配电电缆配件是配电网络系统的关键设备,XLPE / SIR介电接口是电缆配件绝缘的弱链路。在工作中,设计了XLPE / SIR双层结构的界面缺陷模型,并研究了具有不同缺陷的双层结构的击穿特性。此外,建立了双层结构的界面缺陷仿真模型和电缆关节缺陷。实验结果表明,在引入缺陷后,具有双层结构的试样的击穿强度显然降低,其中金属缺陷和半导电缺陷的击穿强度分别为41.37kV / mm和43.66kV / mm没有缺陷的样品减少14.2%和9.5%。仿真结果显示了由金属缺陷和双层结构中的半导体缺陷引起的电场变形分别为44.6kV / mm和44.3kV / mm。绝缘缺陷引起的扭曲相对较小约28.3kV / mm,与实验法一致。电缆附件界面缺陷的仿真表明,由金属缺陷和半导体缺陷引起的最大扭曲电场出现在3.5mm的“XLPE-SIR-应力锥”的三个接线点,约为3.56 kV / mm;相反,由绝缘缺陷引起的最大电场畸变发生在三个接合点,其约为7.23kV / mm。

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