Resonant Cavity Enhanced InAIAs / InGaAs- Msmphotodetectors with 3 dB-cut off Frequency above 100 GHz

摘要

We present a resonant cavity enhanced (RCE) InAIAs/lnGaAs metal-semiconductor-metal (InAIAs/lnGaAs MSM) photodetector driven by a 1550 nm wavelength illumination. The device shows a high dc-photoresponse higher than 0.1 A/W and a cut-off frequency higher than 100 GHz which are suitable properties for sub- THz and THz optoelectronics applications.