A Fully Integrated Floating Gate Driver with Adaptive Gate Drive Technique for High-Voltage Applications

摘要

This paper presents a fully integrated floating gate driver using adaptive gate drive technique (AGDT). Without the breakdown risk of thin-gate-oxide devices in high-voltage applications and the requirements for complex bootstrap structures in dual NMOS power trains, the proposed floating gate driver, based on current source driving with active-clamping-module (ACM), can shift up driving signal from low voltage rang to wide range high voltage output. Compared with previous designs, it consumes no static current and requires no off-chip capacitor for bootstrap nor off-chip power diode for asynchronous rectification, which can enhance efficiency of whole system. Implemented in standard 0.35 μm 30V BCD process and using thin-gate-oxide PMOS as high-side power transistor, measurement results demonstrate that the proposed gate driver can provide effective output signals in 8~25V wide range output.