Modeling and Application for Negative-Differential-Conductance Devices with Single-Electron Technology

摘要

Negative-differential-conductance (NDC) devices can find many applications in both digital and analog circuit design. This paper presents an implementation of NDC using single-electron-tunneling technology with applications to memory cell and Schmitt trigger design. A piece-wise linear model is used to describe the I-V characteristics of the NDC for efficient performance analysis and optimization. Simulation results are shown to verify the effectiveness of the proposed model with considerations of temperature effects for circuit applications.