Multi-Bit RRAM Transient Modelling and Analysis

摘要

Memristors have gained significant attention in various applications due to their unique properties, especially in nonvolatile memory technologies. Thus, there exist many mathematical and compact models that aim to simulate the behavior of memristors accurately. In this work, a comparative study on the capability of different memristor models for transient multi-bit memristive memory simulation is conducted. Moreover, this paper proposes a window function that improves the accuracy of memristor models based on the filament-growth theory. Simulation results reveal the enhancements of the proposed window function and highlight the advantages and the disadvantages of the studied models in transient analysis.