A 17.3–20.2 GHz Fully Integrated Linear Balanced Power Amplifier in 130nm BiCMOS Technology

摘要

A balanced power amplifier has been implemented in a 130nm SiGe BiCMOS technology. It delivers 14 dBm maximum output power and a phase shift as low as 0.2° at 5 dBm of output power. The balanced amplifier is composed of two hybrid couplers and two power cells. The device has been optimized for operation at Ku-band (17.2 to 20.2GHz) and reaches a small signal gain of 7 dB with a maximum saturated output power of 14 dBm. Moreover, it exposes a gain and a phase shift immune to temperature variation (<;0.002 dB/°C and 0.002°/°C respectively).