Cryo-CMOS Low-Noise Amplifier for the Square Kilometre Array

摘要

This paper presents early results from the investigation of a cryogenically cooled CMOS (Cryo-CMOS) low-noise amplifier (LNA). The LNA was designed in a bulk 65-nm CMOS process. Measurements were performed at 300 K and a noise temperature (figure) of 12 K (0.18 dB) was achieved at 1420 MHz (the neutral hydrogen line). The amplifier also exhibits $mathrm {a}32 pm 1.65$ dB gain, an input return loss better than 8.3 dB, an output return loss better than 15.6 dB and consumes a total of 105 mW, 51 mA from a 0.7-V supply and 69 mA from a 1-V supply. From simulations, the LNA is expected to achieve a noise temperature (figure) of 4.5 K (0.07 dB) at an ambient temperature of 77 K while consuming 35 mW, 22mA from a 1-V supply and 19 mA from a 0.7-V supply.