Temperature and stress distribution of IGBT module in DC power cycling test with different switching frequencies

摘要

Insulated gate bipolar transistor has high on-state current and power loss when it operates. The temperature produced by Joule heating causes a great influence on IGBT’s reliability, and it even leads the IGBT module to failure. In this article, a DC power-cycle experimental platform is built up, and a infrared thermal imager is used for measuring the temperature distribution of the IGBT module at different switching frequencies. The external trigger shooting function can make the infrared detecting camera photographed simultaneously at the moment of the heating current turned off, so that the highest temperature of the chip can be exact measured. The electro-thermal-mechanical coupling finite element analysis at different switching frequencies was performed by using ABAQUS software. The results of electro-thermal analysis are in accordance with the measure data, and thermal-mechanical analysis gives the stress spread of the whole module at different switching frequencies. The results of experimental and simulation show that with the increase of switching frequency, the junction temperature difference of the IGBT chip decreases and the maximum stress diminishes.