Study on Interfacial Diffusion Mechanism of The Nonstoichiometric ratio TiN0.3 and AlN composite in the process of sintering

摘要

Covalent compounds have strong covalent bond, thus showing high melting point, high hardness, high temperature resistance, corrosion resistance, wear resistance and other excellent performance, is widely applied to the field of refractory materials and wear-resistant materials. But at the same time this kind of material also has the problem of poor toughness and difficulty in sintering. In this article, by adding the nonstoichiometric ratio to the AlN titanium nitride, a new method were studied to improve the sintering property and reduce the sintering temperature through vacancy diffusion and to study the sintering of micro forming mechanism. The experimental results show that after sintering at the interface between TiN0.3 and AlN two-phase, the TiN0.3 / AlN layer have apparent diffusion zone, AlN in N, Al atom diffusion in TiN0.3 via the vacancy diffusion mechanism. As a result of the existence of a large amount of N of TiN0.3 space, when the diffusion of N atomic migration in TiN0.3 is absorbed by vacancy, and approaches stoichiometric ratio TiN layer AlN substrate; Al atoms crystallized out of the TiN layer in the hexagonal AlN structure in TiN0.3 matrix.