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Thermal Conductivity of Electrically Conductive Highly Boron Doped Diamond and its Applications at High Frequencies

机译:导电高硼掺杂金刚石的导热系数及其在高频中的应用

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Doping with boron during CVD synthesis allows for growth of electrically conductive diamond. Some important applications of boron doped diamond (BDD) include, chemically resistive electrodes, and electrically conductive thermal management material (~700 W/mK), whilst the conductivity allows the diamond to be cut by the electrical discharge machining method. Boron concentration influences thermal conductivity and electrical resistivity. Understanding how boron doping influences these properties is a key to successful integration of the material for various applications. As an electrically conductive heat spreader, thick, boron doped diamond with metallic conductivity (0.05 Ω-cm resistivity) is an ideal replacement for the commonly used metal/diamond configuration or other heat spreader such as copper, copper/refractory or copper laminate. Mounting of RF/Microwave devices on BDD heat spreader enables better isolation of the ground plane at below 1.5GHz, and in reduction of conductive losses at above 1.5GHz due to the increased skin depth.
机译:在CVD合成过程中掺入硼有助于导电金刚石的生长。掺硼金刚石(BDD)的一些重要应用包括化学电阻电极和导电热管理材料(〜700 W / mK),而导电性则允许通过放电加工方法来切割金刚石。硼浓度会影响导热率和电阻率。了解硼掺杂如何影响这些特性是成功整合各种应用材料的关键。作为一种导电散热器,具有金属导电性(0.05Ω-cm电阻率)的厚硼掺杂金刚石可以理想地替代常用的金属/金刚石结构或其他散热器,例如铜,铜/耐火材料或铜层压板。将RF /微波设备安装在BDD散热器上可以更好地隔离低于1.5GHz的接地层,并且由于趋肤深度的增加,可以降低高于1.5GHz的导电损耗。

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