A Fivefold Increase In Cell Density Sets The New Milestone In TrenchFETreg; Device Performance

摘要

Throughout the last decade we have witnessed the advent of the portable electronic device and in so, observed the evolution of battery operated power management systems. Significant demands are now applied to the solid state switching elements of such systems, effectively pushing the silicon performance to its maximum limit. To this effect the industry's best power devices are falling short of the performance criteria, with today's best silicon technology not exhibiting all the characteristics sufficient enough to support the calls for low rds(on), improved figure of merit and smaller die size. Focusing on the most common power switch for low voltage applications, the power MOSFET. This paper will highlight and discuss a new proprietary advanced silicon technology that will enable a new generation of ground breaking MOSFET devices to be produced that will help satisfy the latest demands for ever more efficient power management and power conversion systems. This improved process has allowed the increase of TrenchFET® cell density by fivefold.