ICPD: an SOI-based photodetector with high responsivity and tunable response spectrum

摘要

A novel photodetector based on a silicon-on-insulator (SOI) substrate is demonstrated experimentally in this work. The device uses the interface coupling effect in an SOI transistor structure to amplify the photocurrent, and thus achieves extremely high responsivity up to 6×10⁴ A/W. The responsivity of the device under ultraviolet (UV) light is much higher than that under visible and near-infrared light, which implies potential application in visible-blind UV detection. Furthermore, a MoS₂ gate is combined with the SOI-based photodetector to tune the response spectrum and shift it to the near-infrared band. With high reponsivity and tunable response spectrum, the ICPD device can find many interesting applications.