A S-band 3D Surface Mount Packaged SiGe and GaN Tx Module Using Flip-Chip Bonding and a Device Embedded PCB Substrate

摘要

This paper demonstrates a S-band 3D surface mount packaged Si and GaN Tx Module using flip-chip bonding and a chip embedded PCB Substrate. In order to integrate heterogeneous SiGe and GaN chips in a single package, 3D-structure is employed. The GaN chip is embedded in the PCB substrate and the SiGe chip is flip-chip bonded on the GaN embedded PCB Substrate. The Tx module includes a 5bit phase shifter, a 5bit VGA, a driver amplifier, and a power amplifier. The package size is occupying 7×7mm². The developed Tx module achieves phase and amplitude error of less than 1.3 degrees-rms., and 0.36dB rms., and an output power of30dBm, respectively.