The characteristics of the gallium-doped zinc oxide films using radio frequency magnetron sputtering

摘要

Transparent conductive gallium-doped zinc oxide (GZO) thin films with different deposition power (from 75 to 150 W) were prepared on the Coring glass substrate by using R.F. magnetron sputtering method. The resulting GZO thin films were crystalline, displaying a hexagonal wurtzite-type crystal structure with a preferred grain orientation in the (002) direction. The best FOM was obtained at 125 W.