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机译:低温射频磁控溅射沉积低电阻率掺杂镓的氧化锌膜
Material and Chemical Research Laboratories, Industrial Technology Research Institute, Chutung, Hsinchu 310, Taiwan;
Department of Materials Science and Engineering, I-Shou University, Kaohsiung 840, Taiwan;
Department of Mechanical Engineering, National Taiwan University, Taipei 706, Taiwan;
Institute of Materials Science and Engineering, National Taipei University of Technology, Taipei 106, Taiwan;
Material and Chemical Research Laboratories, Industrial Technology Research Institute, Chutung, Hsinchu 310, Taiwan;
Material and Chemical Research Laboratories, Industrial Technology Research Institute, Chutung, Hsinchu 310, Taiwan;
Institute of Materials Science and Engineering, National Taipei University of Technology, Taipei 106, Taiwan;
Institute of Materials Science and Engineering, National Taipei University of Technology, Taipei 106, Taiwan;
gallium-doped zinc oxide {GZO); transparent conductive oxide (TCO); hall mobility; carrier concentration; resistivity;
机译:沉积距离和温度对射频磁控溅射镓掺杂氧化锌的电,光和结构性能的影响
机译:氧化锌膜的沉积位置对低温磁控溅射制备氧化锌薄膜晶体管特性的影响
机译:室温下通过离轴射频溅射在柔性塑料基板上沉积的低电阻铝掺杂氧化锌薄膜的特性
机译:射频磁控溅射镓掺杂氧化锌薄膜的特性
机译:碲化镉和碲化锌薄膜以及太阳能电池的射频磁控三极管溅射。
机译:在不加热衬底的情况下通过射频磁控等离子体溅射沉积的铝掺杂氧化锌薄膜的空间分辨光电性能
机译:射频磁控溅射在石英衬底上室温沉积Al掺杂ZnO膜及其热退火效应