Synaptic Plasticity in Novel Non-Volatile FET with Amorphous Gate Insulator Enabled by Oxygen Vacancy Related Dipoles

摘要

We experimentally demonstrate the synaptic plasticity characteristics in the non-volatile field-effect transistors (NVFET) integrated with amorphous Al2O3 dielectric utilizing voltage-modulated oxygen vacancy and negative charge dipoles. Both short-term plasticity (STP) and long-term potentiation (LTP) behaviors are obtained in a single Al2O3 NVFET. Sub-millisecond LTP speed allows for high-speed processing. Spike-timing-dependent plasticity (STDP) curves with 100 ns spikes are achieved for the amorphous Al2O3 synaptic transistor.