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Simultaneous front and back side Cu metallization on power chips: DP: Discrete and power devices or ET/ID: Enabling technologies and innovative devices

机译:功率芯片上同时进行正面和背面铜金属化:DP:分立和功率设备或ET / ID:支持技术和创新设备

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摘要

This article describes a new tool and process for Cu electroplating on power chips. The tool enables a new, more efficient method for embedding power chips by means of simultaneous electroplating on both sides of the wafer. Additional tool features, to be discussed in this article, provide technical benefits for embedded technologies and enable further miniaturization of power chip packages to comply with future requirements and products.
机译:本文介绍了一种在功率芯片上进行铜电镀的新工具和工艺。该工具通过在晶片的两面同时进行电镀,为嵌入功率芯片提供了一种新的,更有效的方法。本文将要讨论的其他工具功能将为嵌入式技术带来技术优势,并使电源芯片封装进一步小型化,从而符合未来的要求和产品。

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