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Effect of bonding conditions on shear strength of joints at 200 °C using Sn-coated Cu particle

机译:镀锡铜颗粒在200°C下粘结条件对接头剪切强度的影响

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As a recent trend, the silicon carbide (SiC) is of particular interest for semiconductor device. The SiC power device provides the possibility to develop the next-generation power conversion circuit with high efficiency and high power density. Compared with the conventional silicon (Si) device, the SiC device can operate with significant lower power loss and higher operating temperature, which contributes to miniaturization and higher performance of power modules. To assemble these power modules, the high temperature packaging technology such as die attach process is needed. As a die attach process, we focus on a solid-state bonding, which can be operated at a low temperatures. However, some drawbacks of this technology still remain. For example, the duration of this process is too long, up to a few hours, and multiple hours of annealing are required to achieve a thermodynamically stable joint. So we are studying on a solid-state bonding using Sn-coated Cu particles to reduce the bonding time. In this study, we evaluated the effect of bonding conditions on the shear strength of Cu/Cu joints at 200 t using a Sn-coated Cu particle paste and investigated a high temperature reliability of the joints. As a result, the average shear strength of Cu/Cu joints under a formic acid atmosphere was around 25 MPa at a bonding time of 20 min. Then, the joints had nearly 20MP shear strength after the isothermal aging at 250 t for 1000 h.
机译:作为最近的趋势,碳化硅(SiC)对于半导体器件特别重要。 SiC功率器件为开发具有高效率和高功率密度的下一代功率转换电路提供了可能性。与传统的硅(Si)器件相比,SiC器件可在更低的功率损耗和更高的工作温度下工作,从而有助于实现功率模块的小型化和更高的性能。要组装这些电源模块,需要使用高温封装技术,例如芯片附着工艺。作为管芯附着工艺,我们专注于可以在低温下操作的固态键合。但是,该技术的一些缺点仍然存在。例如,该过程的持续时间太长,长达数小时,并且需要数小时的退火才能实现热力学稳定的接头。因此,我们正在研究使用Sn包覆的Cu颗粒进行固态键合以减少键合时间的方法。在这项研究中,我们评估了使用锡涂层的铜颗粒糊剂在200 t条件下结合条件对Cu / Cu接头剪切强度的影响,并研究了接头的高温可靠性。结果,在甲酸气氛下,在20分钟的粘结时间下,Cu / Cu接头的平均剪切强度约为25 MPa。然后,在250 t等温老化1000 h后,接头具有近20MP的剪切强度。

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