A New Approach to Determinate the Spectral Images for Defect Centres in High-Resistive Semiconductor Materials

摘要

The electrical properties of semiconductor materials depend on their defect structure. Currently, the method of photo-induced transient spectroscopy (PITS) is commonly used, to analyse the defect structure of high-resistive semiconductor materials. The PITS method depends on looking for exponential components according to Arrhenius equations for all registered relaxation photocurrents after turning off the light. The CONTIN program is used to analyse the spectral image in that process. Because this method can be considered as ill-posed problem, the received results are imprecise. In addition, the determination of concentration of defect centres takes place in a separate process, which is quite complex. The purpose of the article is to present the concept of extending the existing system for increase the resolution of the obtained analysis results as well as determine the concentration of detected defect centres. The results presented in the paper presents the possibilities of parameters regularization in the CONTIN program for the process of determining the defect centres parameters.