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Design and implementation of a CMOS-MEMS microphone without the back-plate

机译:不带背板的CMOS-MEMS麦克风的设计和实现

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This study exploits the CMOS-MEMS technology to demonstrate a condenser microphone without back-plate. The reference sensing electrodes are fixed to the substrate, and thus no back-plate is required. To reduce the unwanted deformations resulted from the thin-film residual-stresses and temperature variation for the suspended CMOS-MEMS structures, the suspended acoustic diaphragm and sensing electrodes are respectively formed by the pure-dielectric and symmetric metal-dielectric layers. The design was implemented using TSMC 0.18μm 1P6M standard CMOS process, and the in-house post-CMOS releasing. Typical microphone with acoustic-diaphragm of 300μm-diameter and sensing-electrode of 50μm-long is fabricated and tested. Measurements indicate the sensitivity is −64dBV/Pa at 1kHz under 13.5V bias-voltage. The design enables the CMOS-MEMS microphone having good temperature stability between 30∼90°C.
机译:这项研究利用CMOS-MEMS技术演示了无背板的电容式麦克风。参考感测电极被固定到基板,因此不需要背板。为了减少由薄膜残余应力和悬空的CMOS-MEMS结构的温度变化引起的不希望的变形,悬空的声膜和感测电极分别由纯介电层和对称金属介电层形成。该设计是使用台积电0.18μm1P6M标准CMOS工艺和内部CMOS后版本实现的。制作并测试了典型的麦克风,其声学膜片直径为300μm,感应电极的长度为50μm。测量表明,在13.5V偏置电压下1kHz时,灵敏度为−64dBV / Pa。该设计使CMOS-MEMS麦克风在30-90°C之间具有良好的温度稳定性。

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