首页> 外文会议>International Conference on Solid-State Sensors, Actuators and Microsystems >d15-Enhanced shear-extensional aluminum nitride resonators with kt > 4.4 for wide-band filters
【24h】

d15-Enhanced shear-extensional aluminum nitride resonators with kt > 4.4 for wide-band filters

机译:具有kt> 4.4 %的d15增强型剪切扩展氮化铝谐振器,用于宽带滤波器

获取原文

摘要

This paper presents a novel aluminum nitride (AlN) resonator technology that fuses transverse (d31) and shear (d15) piezoelectric constants to realize a large electromechanical coupling factor (kt), while having a frequency defined by the lateral dimensions. An antisymmetric Lamb wave with co-existing in-plane extensional and thickness-shear elastic energy distribution is used to simultaneously exploit transverse and shear electromechanical coupling of AlN film. Specifically, the shear transduction (kt,15) benefits from the large d15 constant (due to the columnar single crystallinity of the film) as well as low in-plane (ε11) relative permittivity (due to the in-plane poly crystallinity) of the AlN film, and hence significantly improves the overall kt. A proof of concept device at 733MHz is demonstrated based on this technology, showing a Q of ∼1,400 with a kt of ∼4.4%. A ladder filter is also demonstrated, through electrical coupling of the d15-enhanced resonators, with a −3dB-bandwidth of 18MHz, at 745MHz.
机译:本文提出了一种新颖的氮化铝(AlN)谐振器技术,该技术融合了横向(d31)和剪切(d15)压电常数,以实现较大的机电耦合系数(kt),同时具有由横向尺寸定义的频率。具有平面内延伸和厚度剪切弹性能量分布的反对称兰姆波被用来同时利用AlN薄膜的横向和剪切机电耦合。具体而言,剪切转导(kt,15)得益于较大的d15常数(由于薄膜的柱状单结晶度)以及较低的面内相对介电常数(ε11)(由于面内多结晶度) AlN膜,因此可显着提高整体kt。基于该技术演示了一种在733MHz频率下的概念验证设备,其Q值为约1,400,kt约为4.4%。通过d15增强谐振器的电耦合,在745MHz处,−3dB带宽为18MHz的梯形滤波器也得到了演示。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号