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Options for Radiation Tolerant High-Performance Memory

机译:耐辐射高性能内存的选项

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摘要

Memory technologies were reviewed for radiation effects performance in order to determine the most cost-efficient target for a possible memory investment targeted at creating a memory component of general applicability for space use. TID and SEL trends that had indicated improvement in intrinsic performance based on scaling cannot be trusted. SEE hardening of memory arrays is prohibitive in terms of cell-level power and area requirements. Radiation-hardened cells and custom controllers are recommended for future memory developments.
机译:为了确定辐射效应的性能,对存储技术进行了审查,以便确定可能的存储器投资的最具成本效益的目标,该投资旨在创建具有通用性的空间用途的存储器组件。 TID和SEL趋势已表明基于缩放的内在性能有所改善,这是不可信的。就单元级功率和面积要求而言,内存阵列的SEE硬化是令人望而却步的。建议对辐射硬化的单元和自定义控制器进行将来的内存开发。

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