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In-Beam Programming of Radiation-Hardened Flash-Based FPGA—RTG4

机译:基于辐射增强闪存的FPGA的光束内编程-RTG4

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摘要

In-beam programming of the first radiation-hardened Flash-based FPGA-RTG4 is investigated. Programming by commercially available FlashPro is performed under perpendicular heavy-ion irradiation with LET ranging from 1.2 to 30.5 MeV-cm2/mg. Although there are interruptions during programming with artificially high flux in beam test, the acquired Weibull curve predicts very high successful rate of programming in space. The cause of interruptions is identified by TPA laser scanning to be single event upsets of row and column registers which setup the cells to be configured.
机译:研究了第一个基于辐射硬化的基于Flash的FPGA-RTG4的光束内编程。由市售FlashPro进行的编程是在垂直重离子辐射下进行的,LET的范围为1.2到30.5 MeV-cm 2 /毫克尽管在光束测试中以人为高通量进行编程时会出现中断,但是所获得的威布尔曲线预测了空间编程的成功率非常高。通过TPA激光扫描将中断的原因确定为行和列寄存器的单事件失败,这将设置要配置的单元。

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