Study of Floating Gate MOS Structures to improve the noise and sensitivity as Radiation Dosimeter

摘要

The floating gate dosimeter is a new dosimeter whose performance can be improved by applying different techniques at sensor design and at readout level. This work is focused on the active sensor part and it extrapolates the key parameters influencing the sensitivity and the noise of the floating gate by means of real measurements and models. The measurements have been carried out on different type of structures and compared with two theoretical models presented in the literature.