A comparison of the impact of metal-ion containing and metal-ion free photoresist developers on graphene field-effect transistors

摘要

Heterogeneous integration of graphene with different technologies necessitates the understanding of the impact photoresist developers have on its performance. We statistically evaluate the impact of metal-ion containing (MIC) and metal-ion free (MIF) developers on graphene field-effect transistors (GFETS). We compare the performance of GFETs fabricated using MIC and MIF developers. We find that GFETs fabricated using MIF developers have lower charged impurity concentration, leading to a lower Dirac point shift and charge carrier mobility 2 to 4 times higher than those fabricated using MIC developers. We also empirically identified the scaling factor between charge carrier mobility (μ) and charged impurity concentration (n₀) as μ ≅ 4.24q/(hn₀).