A simple implementation of scanning tunneling potentiometry with a standard scanning tunneling microscope

摘要

In this paper, we present a technique for local measurements of the surface potential in the presence of a biasing current flow through a sample. This technique can be implemented by using standard scanning tunneling microscopy (STM) equipment. It is demonstrated that this potentiometry technique can be useful for in-situ sample characterization in ultra-high vacuum (UHV).