Heavily-doped SOI substrate and transfer printing for charge injection into TMDC layer

摘要

Layered semiconductors of transition metal dichalcogenides (TMDC) have been considerable attention for both scientific interest and practical applications [1]. This paper describes a method to fabricate TMDC field-effect transistors (FETs) with heavily-doped silicon on insulator (SOI) substrate. The FETs are constructed by transfer of TMDC crystals on the surface of pre-patterned SOI substrate. This method can eliminate the deposition of metals and dielectrics on a TMDC surface [2]. In addition, various TMDC can be applied to the fabrication of FETs. The heavily-doped SOI serves as a gate electrode, while an efficient injection of carriers into TMDC can be accomplished because of overlap structure between gate electrode and source/drain contacts. The device characteristics are investigated.