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ECP technique based capacitor-less LDO with high PSRR at low frequencies, −89dB PSRR at 1MHz and enhanced transient response

机译:基于ECP技术的无电容LDO,在低频时具有高PSRR,在1MHz时具有−89dB PSRR,并具有增强的瞬态响应

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An external capacitor-less low dropout (LDO) voltage regulator with high PSRR and enhanced transient response is presented. The novel idea is applying a replica circuit which can pull excessive current. Excessive Current Pulling (ECP) technique decreases the equivalent output impedance to enhance transient response. The proposed LDO has been simulated in 0.18 μm CMOS Technology. Its regulated output voltage is 1.6 V with the power supply of 1.8 V. The proposed technique has the advantages of simulated PSRR of -88.7 dB at 1 MHz and -67 dB at 100 KHz. Overshoots and undershoots are less than 45.2 mV and 30 mV under the load varies from 50 mA to 0 mA with rise/fall time of 100ns, respectively. Simulation results show that the achieved line regulation is 28.3 mV/V and the load regulation is 0.33 %/mA.
机译:提出了一种具有高PSRR和增强的瞬态响应的外部无电容器低压降(LDO)稳压器。新颖的想法是应用复制电路,该电路可以拉动过多的电流。过大的电流牵引(ECP)技术会降低等效输出阻抗,以增强瞬态响应。拟议的LDO已在0.18μmCMOS技术中进行了仿真。其稳压输出电压为1.6 V,电源电压为1.8V。所提出的技术具有在1 MHz时仿真PSRR为-88.7 dB在100 KHz时为-67 dB的优点。在负载从50 mA到0 mA的变化范围内,负载的上冲和下冲分别小于45.2 mV和30 mV,上升/下降时间分别为100ns。仿真结果表明,所实现的线路调整率为28.3 mV / V,负载调整率为0.33 \%/ mA。

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