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ECP technique based capacitor-less LDO with high PSRR at low frequencies, ?89dB PSRR at 1MHz and enhanced transient response

机译:基于ECP技术的基于电容器的LDO,具有低频率的高PSRR,α89dBPSRR为1MHz,增强瞬态响应

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An external capacitor-less low dropout (LDO) voltage regulator with high PSRR and enhanced transient response is presented. The novel idea is applying a replica circuit which can pull excessive current. Excessive Current Pulling (ECP) technique decreases the equivalent output impedance to enhance transient response. The proposed LDO has been simulated in 0.18 μm CMOS Technology. Its regulated output voltage is 1.6 V with the power supply of 1.8 V. The proposed technique has the advantages of simulated PSRR of -88.7 dB at 1 MHz and -67 dB at 100 KHz. Overshoots and undershoots are less than 45.2 mV and 30 mV under the load varies from 50 mA to 0 mA with rise/fall time of 100ns, respectively. Simulation results show that the achieved line regulation is 28.3 mV/V and the load regulation is 0.33 %/mA.
机译:介绍了具有高PSRR和增强瞬态响应的外部电容器的低丢失(LDO)电压调节器。新颖的想法是应用一种可以拉过电流的复制电路。过电流拉动(ECP)技术降低了等效的输出阻抗,以增强瞬态响应。所提出的LDO已在0.18μmCMOS技术中进行模拟。其调节的输出电压为1.6V,电源为1.8 V.所提出的技术在1MHz和-67 dB时具有-88.7dB的模拟PSRR的优点。过冲和下冲小于45.2 MV,30 mV下载量下降50 mA到0 mA,分别上升/下降时间为100ns。仿真结果表明,达到的线条调节为28.3mV / v,负载调节为0.33 %/ mA。

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